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DATA SHEET
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER -NEPOC
TM
Series-
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
* Long creepage and clearance distance (8 mm) * High isolation voltage (BV = 5 000 Vr.m.s.) * High collector to emitter voltage (VCEO = 80 V) * High-speed switching (tr = 3 s TYP., tf = 5 s TYP.) * High current transfer ratio (CTR = 200 % TYP.) * UL approved: File No. E72422 (S) * CSA approved: No. 101391 * BSI approved: No. 8243/8244 * NEMKO approved: No. P97103006 * DEMKO approved: No. 307269 * SEMKO approved: No. 9741154/01 * FIMKO approved: No. 018277 * VDE0884 approved
ORDERING INFORMATION
Part Number PS2581L1 PS2581L2 PS2581L2-E3, E4 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP taping Package Safety Standard Approval UL, CSA, BSI, NEMKO, DEMKO, SEMKO, FIMKO, VDE approved Application Part Number PS2581L1 PS2581L2
*1
*1 As applying to Safety Standard, following part number should be used.
The information in this document is subject to change without notice.
Document No. P12809EJ2V0DS00 (2nd edition) Date Published June 1998 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1997
PS2581L1,PS2581L2
PACKAGE DIMENSIONS (in millimeters)
PS2581L1
4.60.35 1.00.2 4
TOP VIEW
3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 7.62
3.20.4
4.150.4
0.35
3.50.3
6.5+0.5 -0.1
2.54
0.500.1 0.25 M 0 to 15
1.250.15
PS2581L2
4.60.35 1.00.2 4
TOP VIEW
3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2
6.5+0.5 -0.1
10.16 7.62
3.50.3 0.250.2
1.250.15 0.25 M
0.90.25 2.54 12.0 MAX.
PHOTOCOUPLER CONSTRUCTION
Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Thickness Unit (MIN.) 8 mm 8 mm 4 mm 0.4 mm
2
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor
*1
Symbol IF VR
Ratings 80 6 1.5 150 1 80 7 50 1.5 150 5 000 -55 to +100 -55 to +150
Unit mA V mW/C mW A V V mA mW/C mW Vr.m.s. C C
PD/C
PD IFP VCEO VECO IC
Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation
PC/C
PC BV TA Tstg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output
3
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time
*2 *1
Symbol VF IR Ct ICEO CTR VCE(sat) RI-O CI-O tr tf
Conditions IF = 10 mA VR = 5 V V = 0 V, f = 1.0 MHz VCE = 80 V, IF = 0 mA IF = 5 mA, VCE = 5 V IF = 10 mA, IC = 2 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 2 mA, RL = 100
MIN.
TYP. 1.17
MAX. 1.4 5
Unit V
A
pF
50 100 80 200 400 0.3 10
11
nA % V
0.5 3 5
pF
s
*2
*1 CTR rank L : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time
Pulse Input PW = 100 s Duty Cycle = 1/10 IF 50 VOUT RL = 100 VCC
4
PS2581L1,PS2581L2
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
150
150
Diode Power Dissipation PD (mW)
100
100
50
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature TA (C)
Ambient Temperature TA (C)
FORWARD CURRENT vs. FORWARD VOLTAGE
100 50
Forward Current IF (mA)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
70
Collector Current IC (mA)
TA = +100 C +60 C +25 C
60 50 40
50 mA
10 5 0 C -25 C -55 C
1 0.5
30 20 10
20
mA A m 10
IF = 5 mA
0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current ICEO (nA)
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
40
10 000
Collector Current IC (mA)
1 000
VCE = 80 V 40 V 24 V 10 V 5V
10 5
50 mA 20 mA 10 mA
5 mA
2 mA
100
1 0.5
IF = 1 mA
10
1 - 50 -25 0 25 50 75 100
0.1 0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (C)
Collector Saturation Voltage VCE(sat) (V)
5
PS2581L1,PS2581L2
NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs. FORWARD CURRENT
450 400 350 300 250 200 150 100 50 0 0.05 0.1 0.5 1 5 10 50
,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6
1.2 0.4 0.2 0 Normalized to 1.0 at TA = 25 C, IF = 5 mA, VCE = 5 V -50 -25 0 25 50 75 100
Ambient Temperature TA (C)
Forward Current IF (mA)
SWITCHING TIME vs. LOAD RESISTANCE
50 IC = 2 mA, VCC = 10 V, CTR = 290 %
Switching Time t ( s)
SWITCHING TIME vs. LOAD RESISTANCE
1 000 IF = 5 mA, VCC = 5 V, CTR = 290 %
Switching Time t ( s)
tf tr 100
tf
10 td ts 1
ts
10
tr 0.1 10 50 100 500 1 k 5 k 10 k 1 100 td 500 1 k 5 k 10 k 50 k 100 k
Load Resistance RL ()
Load Resistance RL ()
FREQUENCY RESPONSE
CTR Degradation (Relative Value)
LONG TERM CTR DEGRADATION
1.2 TYP. 1.0 0.8 0.6 0.4 0.2 0 IF = 5 mA TA = 60 C IF = 5 mA TA = 25 C
0
Normalized Gain GV
IF = 5 mA, VCE = 5 V
-5 -10 -15 RL = 1 k -20 300 0.5 1 2 5 10 20 50 100 200 500
100
102
103 Time (Hr)
104
105
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
6
PS2581L1,PS2581L2
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.00.1 4.00.1
1.750.1
1.550.1
4.30.2
11.50.1
24.00.3
2.050.1 12.00.1
6.450.1
0.38
Tape Direction
PS2581L2-E3 PS2581L2-E4
Outline and Dimensions (Reel)
2.00.5 13.01.0
12.20.1
R 1.0
21.01.6
80.05.0
330
24.4+2.0 -0.0
Packing: 1 000 pcs/reel
7
PS2581L1,PS2581L2
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering * Peak reflow temperature * Time of temperature higher than 210 C * Number of reflows * Flux 235 C (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (C)
(heating) to 10 s 235 C (peak temperature) 210 C to 30 s 120 to 160 C 60 to 90 s (preheating)
Time (s)
Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.
Peak temperature 235 C or below
(2) Dip soldering * Temperature * Time * Number of times * Flux 260 C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
8
PS2581L1,PS2581L2
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Application classification (DIN VDE 0109) for rated line voltages 300 Vr.m.s. for rated line voltages 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 x UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for random test) Upr = 1.6 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 C (Tsi) Tstg TA CTI UIORM Upr Symbol Speck Unit
IV III 55/100/21 890 1 068 Vpeak Vpeak
Upr
1 424
Vpeak
UTR
8 000 2 > 8.0 > 8.0 175 III a -55 to +150 -55 to +100
12
Vpeak
mm mm
C C
Ris MIN. Ris MIN.
10 11 10
Tsi Isi Psi Ris MIN.
175 400 700 10
9
C mA mW
9
PS2581L1,PS2581L2
[MEMO]
10
PS2581L1,PS2581L2
[MEMO]
11
PS2581L1,PS2581L2
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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